STRAIN-INDUCED PHASE-SEPARATION IN ANNEALED LOW-TEMPERATURE-GROWN AL0.3GA0.7AS

Authors
HSIEH KC HSIEH KY HWANG YL ZHANG T KOLBAS RM
Citation
Kc. Hsieh et al., STRAIN-INDUCED PHASE-SEPARATION IN ANNEALED LOW-TEMPERATURE-GROWN AL0.3GA0.7AS, Applied physics letters, 68(13), 1996, pp. 1790-1792
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
13
Year of publication
1996
Pages
1790 - 1792
Database
ISI
SICI code
0003-6951(1996)68:13<1790:SPIALA>2.0.ZU;2-E
Abstract
Data are presented to show that the hydrostatic strain in a metastable Al0.3Ga0.7As film grown at low temperatures induces a one-dimensional compositional modulation upon annealing at 600 degrees C, a direct ev idence of the existence of a miscibility gap in strained AlxGa1-xAs. A strain-driven vacancy-assisted mechanism is proposed to account for t he compositional modulation and segregation of As clusters. (C) 1996 A merican Institute of Physics.