ROLE OF HYDROGEN IN DOPING OF GAN

We investigate the interactions between hydrogen and dopant impurities in GaN, using state-of-the-art first-principles calculations. Our res ults for energetics and migration reveal a fundamental difference in t he behavior of hydrogen between p-type and n-type material; in particu lar, we explain why hydrogen concentrations in n-type GaN are low, and why hydrogen has a beneficial effect on acceptor incorporation in p-t ype GaN. Our results identify the conditions under which hydrogen can be used to control doping in semiconductors in general. (C) 1996 Ameri can Institute of Physics.