DYNAMICAL SWITCHING BEHAVIOR OF N-I-P-I MODULATOR STRUCTURES

We report on the ac switching behavior of surface-normal electro-optic al modulators based on hetero-n-i-p-i structures. We have investigated systematically the way the transition times scale with device dimensi ons and present a straightforward theoretical model including sheet re sistivities of n and p layers as well as contact resistances. The mode l is in excellent agreement with experimental data. With a voltage swi ng as low as 3.7 V, we achieved a single path contrast ratio in excess of 2:1 and maximum 3 dB frequencies larger than 250 MHz. (C) 1996 Ame rican Institute of Physics.