PD ZN/PD/AU AND PD/ZN/AU/LAB6/AU OHMIC CONTACTS TO P-TYPE IN0.53GA0.47AS/

The resistivity and interfacial characteristics of Pd/Zn/Pd/Au and Pd/ Zn/Au/LaB6/Au contacts to p-In0.53Ga0.47As have been investigated. Ann ealing of the contacts at 375-425 degrees C yielded a a minimum in spe cific contact resistance, p(c), of 2 X 10(-7) Omega cm(2) for the Pd/Z n/Pd/Au contacts and 1 X 10(-6) Omega cm(2) for the Pd/Zn/Au/LaB6/Au c onfiguration. The measurement of p(c) for the Pd/Zn/Pd/Au system is th e lowest reported for an ohmic contact to p-In0.53Ga0.47As doped to le ss than or equal to 1 x 10(19) cm(-3). In the Pd/Zn/Au/LaB6/Au scheme, the minimum in p(c) was the same whether the Zn was incorporated as a structural layer or as Zn ions implanted into the interfacial Pd. At greater than or equal to 375 degrees C, the LaB6 layer limited the ind iffusion of Au and the degradation of the In0.53Ga0.47As substrate. (C ) 1996 American Institute of Physics.