PRACTICAL ASPECTS FOR THE USE OF PLASMA EMISSION MONITORING IN REACTIVE MAGNETRON SPUTTERING PROCESSES

The sensitivity of Plasma Emission Monitoring (PEM) depends on both ta rget material and oxygen mass flow at least for indium and tin target. Optical emission intensity and cathode voltage were recorded for seve ral argon and oxygen flows in various tin and indium oxide thin film f abrication experiments, with the magnetron working in constant current mode. The results obtained indicate marked differences between indium and tin targets, as far as their reactive sputtering behaviour is con cerned. A theoretical explanation is proposed for the observed target voltage variations with increasing oxygen mass flow in relation to the corresponding optical emission intensities.