THE INFLUENCE OF OXYGEN PARTIAL-PRESSURE AND TOTAL PRESSURE (O2-FILMSPREPARED BY DC SPUTTERING(AR) ON THE PROPERTIES OF TIN OXIDE)

Citation
Lj. Meng et Mp. Dossantos, THE INFLUENCE OF OXYGEN PARTIAL-PRESSURE AND TOTAL PRESSURE (O2-FILMSPREPARED BY DC SPUTTERING(AR) ON THE PROPERTIES OF TIN OXIDE), Vacuum, 45(12), 1994, pp. 1191-1195
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
45
Issue
12
Year of publication
1994
Pages
1191 - 1195
Database
ISI
SICI code
0042-207X(1994)45:12<1191:TIOOPA>2.0.ZU;2-O
Abstract
Tin oxide films have been prepared on glass substrates by dc reactive magnetron sputtering using a metallic tin target of 99.99% purity (100 x 100 x 2 mm3) in an argon and oxygen mixed atmosphere. The influence of the oxygen partial pressure and total pressure on the X-ray diffra ction, transmittance, resistivity, optical band gap, refractive index, packing density and deposition rate have been investigated systematic ally. When oxygen partial pressure is lower than 4 x 10(-3) mbar, the films show an amorphous structure and are not transparent in the visib le region but are transparent in the near IR region. When oxygen parti al pressure is between 4 x 10(-3) mbar and 6 x 10(-3) mbar, the films show a good polycrystalline structure, a high transmittance in the vis ible and near IR regions and a high packing density. When oxygen parti al pressure is higher than 6 x 10(-3) mbar, the film structure deterio rates and the film packing density decreases. At fixed oxygen partial pressure, the film prepared at low total pressure has better structure and higher packing density than that prepared at high total pressure.