PLASMA-ASSISTED IN-SITU LASER DEPOSITION OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS WITH LASER-HEATING AND ANNEALING

Citation
Pa. Atanasov et al., PLASMA-ASSISTED IN-SITU LASER DEPOSITION OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS WITH LASER-HEATING AND ANNEALING, Vacuum, 45(12), 1994, pp. 1215-1219
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
45
Issue
12
Year of publication
1994
Pages
1215 - 1219
Database
ISI
SICI code
0042-207X(1994)45:12<1215:PILDOY>2.0.ZU;2-C
Abstract
Single-chamber laser processing of high temperature Y1Ba2Cu3O7-x thin films on SrTiO3(100), ZrO2(100) and MgO(100) substrates was carried ou t using plasma assisted in situ laser deposition. The films were depos ited by XeCl excimer laser ablation at substrate temperatures as low a s 450-550-degrees-C. A dc oxygen plasma at a partial pressure of up to 200 mtorr forced oxygen incorporation during the film growth at a low substrate temperature. The problem of firing and maintaining the disc harge was solved by appropriate electrode geometry. Direct cw CO2 lase r irradiation of the substrate surface and excimer laser plume were us ed to reduce the density of particulates. The films were characterized by: X-ray diffraction, four-point probe ac electrical resistivity mea surements, SEM and XMA. AT(c) onset of approximately 88-90 K and J(c) approximately 7 x 10(5) A cm-2 at 4.2 K were measured.