Pa. Atanasov et al., PLASMA-ASSISTED IN-SITU LASER DEPOSITION OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS WITH LASER-HEATING AND ANNEALING, Vacuum, 45(12), 1994, pp. 1215-1219
Single-chamber laser processing of high temperature Y1Ba2Cu3O7-x thin
films on SrTiO3(100), ZrO2(100) and MgO(100) substrates was carried ou
t using plasma assisted in situ laser deposition. The films were depos
ited by XeCl excimer laser ablation at substrate temperatures as low a
s 450-550-degrees-C. A dc oxygen plasma at a partial pressure of up to
200 mtorr forced oxygen incorporation during the film growth at a low
substrate temperature. The problem of firing and maintaining the disc
harge was solved by appropriate electrode geometry. Direct cw CO2 lase
r irradiation of the substrate surface and excimer laser plume were us
ed to reduce the density of particulates. The films were characterized
by: X-ray diffraction, four-point probe ac electrical resistivity mea
surements, SEM and XMA. AT(c) onset of approximately 88-90 K and J(c)
approximately 7 x 10(5) A cm-2 at 4.2 K were measured.