DISLOCATION DENSITY-DEPENDENT PHOTOREFRACTIVE EFFECT IN (001)-CUT GAAS

Authors
JARASIUNAS K VAITKUS J DELAYE P ROOSEN G
Citation
K. Jarasiunas et al., DISLOCATION DENSITY-DEPENDENT PHOTOREFRACTIVE EFFECT IN (001)-CUT GAAS, Optics letters, 19(23), 1994, pp. 1946-1948
Citations number
11
Categorie Soggetti
Optics
Journal title
Optics letters → ACNP
ISSN journal
01469592
Volume
19
Issue
23
Year of publication
1994
Pages
1946 - 1948
Database
ISI
SICI code
0146-9592(1994)19:23<1946:DDPEI(>2.0.ZU;2-0
Abstract
We present studies of the photorefractive effect in nonphotorefractive orientations of liquid-encapsulated Czochralski-grown GaAs crystals. Picosecond diffraction experiments conducted in different samples show that a forbidden photorefractive signal correlates well with dislocat ion density, which points out that the effect arises from strain field s and growth defects.