FORMATION OF CRYSTALLOGRAPHIC TEXTURE IN RF SPUTTER-DEPOSITED CR THIN-FILMS

Citation
Yc. Feng et al., FORMATION OF CRYSTALLOGRAPHIC TEXTURE IN RF SPUTTER-DEPOSITED CR THIN-FILMS, Journal of applied physics, 76(11), 1994, pp. 7311-7316
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
76
Issue
11
Year of publication
1994
Pages
7311 - 7316
Database
ISI
SICI code
0021-8979(1994)76:11<7311:FOCTIR>2.0.ZU;2-9
Abstract
Although it is well known that Cr underlayers sputter deposited on gla ss or NiP/Al substrates have either the (002) or (110) textures, the m echanism of the formation of the crystallographic textures is not clea r. A model is proposed for the formation of the crystallographic textu re of sputter-deposited Cr thin films. A systematic set of experiments has been carried out to test the model. It was found that the (110) t exture, which is usually found in Cr thin films deposited on substrate s without preheating, can form at elevated temperatures (250 degrees C ) when deposited at low Ar pressure or by applying substrate bias. The initial stage of the texture formation was also investigated by using very thin Cr films. It was found that the (002) texture can be initia ted directly on the substrate surface, while the (110) texture appears not to form directly on substrate surface, but rather as a result of film growth. The proposed model is consistent with the experimental re sults. (C) 1994 American Institute of Physics.