HYDROGEN PASSIVATION EFFECTS IN INGAALP AND INGAP

The effects of hydrogen treatment on electrical properties, luminescen ce spectra, and deep traps in InGaAlP and InGaP have been studied. It is shown that acceptors and donors (both shallow and deep) can be effe ctively passivated by hydrogen. The hydrogen is found not only to pass ivate the main electron and hole traps in our samples, but also to gen erate electron traps in n-InGaAlP and hole traps in p-InGaP. The influ ence of hydrogen treatment mode (direct plasma or a crossed-beams sour ce in which the low-energy ion bombardment of the surface is effective ly eliminated) on hydrogen concentration and hydrogen profiles in InGa AlP are discussed. (C) 1994 American Institute of Physics.