T. Yodo et al., GAAS HETEROEPITAXIAL GROWTH ON VICINAL SI(110) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 76(11), 1994, pp. 7630-7632
We report the growth mechanism of GaAs on vicinal Si(110) substrates b
y molecular beam epitaxy, and investigate the effects of off-angle and
-direction on the crystalline quality of grown films. The quality was
improved with the increase of the off-angle and strongly influenced b
y the off-direction. Off-direction toward the [001] was better than th
at toward the [110] for obtaining high-quality films. The cause is rel
ated to the structure and density of the steps. We infer from reflecti
on high-energy electron diffraction results that GaAs films on vicinal
Si(110) with off-angles above 2 degrees toward the [001] direction gr
ew up to a thickness of 3 Mn in step-flow-like mode. The spotty reflec
tion high-energy electron diffraction patterns characteristic of three
-dimensional growth in GaAs/Si(100) were not observed at a thickness a
bove 3 nm. (C) 1994 American Institute of Physics.