ELECTRON-TRANSPORT IN INGAAS ALINAS HETEROSTRUCTURES AND ITS IMPACT ON TRANSISTOR PERFORMANCE/

We have studied electron transport in a variety of doped and modulatio n-doped InGaAs/AlInAs quantum wells within the context of field-effect transistor performance. Both quantum-well width and doping profile we re varied with all layers lattice matched to the InP substrate. Electr on transport properties in the structures were characterized using Hal l, geometric magnetoresistance, and microwave velocity-field measureme nts, and transistor performance in terms of transconductance and chann el current in 1.8- and 0.5-mu m gate-length devices. Transconductances in 0.5-mu m gate-length transistors were as high as 590 mS/mm and w e re more directly correlated to the peak electron velocity than to the low-field mobility. (C) 1994 American Institute of Physics.