LIBR ON SI(111) - AN X-RAY STANDING-WAVE MEASUREMENT

Authors
GOG T FOLLIS GC DURBIN SM
Citation
T. Gog et al., LIBR ON SI(111) - AN X-RAY STANDING-WAVE MEASUREMENT, Applied surface science, 81(4), 1994, pp. 485-487
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
81
Issue
4
Year of publication
1994
Pages
485 - 487
Database
ISI
SICI code
0169-4332(1994)81:4<485:LOS-AX>2.0.ZU;2-Z
Abstract
Using X-ray standing waves, the vertical position of Br ions of a thin epitaxially grown overlayer of LiBr on a Si(111) substrate has been d etermined. This system is a prototype for the epitaxial growth of high ly ionic compounds onto covalent semiconductors. The results are consi stent with a polar LiBr(111) bilayer, with Br ions in the lower level in on-top sites above the Si interface and Li ions occupying the upper level.