THE SEMICONDUCTOR-METAL TRANSITION OF LIQUID ARSENIC-SELENIUM MIXTURES AT HIGH-TEMPERATURES AND HIGH-PRESSURES

Citation
H. Hoshino et al., THE SEMICONDUCTOR-METAL TRANSITION OF LIQUID ARSENIC-SELENIUM MIXTURES AT HIGH-TEMPERATURES AND HIGH-PRESSURES, Journal of non-crystalline solids, 207, 1996, pp. 43-47
Citations number
12
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
207
Year of publication
1996
Part
1
Pages
43 - 47
Database
ISI
SICI code
0022-3093(1996)207:<43:TSTOLA>2.0.ZU;2-Z
Abstract
The electrical conductivity sigma and thermoelectric power S of liquid As-Se mixtures (up to 40 at.% As) have been measured at high temperat ures (up to 1500 degrees C) and high pressures (up to 1200 bar). For t hese mixtures, broad maxima appear in both the (partial derivative ln sigma/partial derivative P)(T) versus T and the(-partial derivative ln S/partial derivative P)(T) versus T curves, The maximum temperature T -max at which these maxima occur decreases monotonically up to 30 at.% As. Around T-max the semiconductor-metal transition occurs, which is enhanced by applying pressure. It was found that T-max increases as th e As concentration changes from 30 to 40 at.% As. The results of EXAFS suggest a substantial change in the local atomic configuration around As atoms for 30 at.% As.