ELECTRICAL AND OPTICAL STUDIES ON AMORPHOUS CUINSE2 FILMS

The composition, homogeneity and amorphous state of CuInSe2 films of t hickness 0.7 to 1.0 mu m were determined by EDAX (energy dispersion an alysis X-ray) and XRD. The dependence of the I-V characteristic curves on the electrode material, in a coplanar configuration, showed that A g, Cu and Ni provided ohmic behaviour while Al did not. Results of the temperature dependence of de conductivity in the dark and under He-Ne laser illumination are reported and discussed. Analysis of the optica l data, for the as-deposited a-CuInSe2 films, indicated the respective values of 1.4 eV, 9.18 and 190 meV, 3.05 and 24.93 eV for the energy gap, the static dielectric constant, the disordered parameter, the ave rage gap and the dispersion energy.