DIFFUSION OF GOLD AND PLATINUM IN AMORPHOUS-SILICON AND GERMANIUM

Au-195 radiotracer atoms produced via the radioactive decay of implant ed Hg-195 ions have been used to investigate systematically the diffus ivities of Au in amorphous Si and Ge by means of serial Ar+-beam secti oning as a function of the diffusion temperature, doping with Au and/o r charging with hydrogen. Less extensive studies of the same type have been carried out for the diffusion of Pt in Pt-doped amorphous silico n. The Au diffusion data are interpreted in terms of direct diffusion in which the diffusing Au-195 atoms are temporarily trapped by differe nt kind of vacancy-like defects. These traps can be saturated with Au or hydrogen. Their nature and concentrations are found to change as a result of annealing-induced structural relaxation of the amorphous spe cimens.