G. Gantner et al., TIME-RESOLVED PHOTOELECTRON-SPECTROSCOPY OF GERMANIUM AND SILICON DURING THE SOLID TO THE LIQUID-STATE PHASE-TRANSITION, Journal of non-crystalline solids, 207, 1996, pp. 490-493
Photoelectron spectroscopy of liquid silicon and germanium has been pe
rformed by using a new technique based on laser-pulse induced melting
of sample surfaces and time resolved detection of the photoelectrons.
With this method it has, for the first time, been possible to observe
the solid to liquid phase transition of silicon, an element with a vap
or pressure in the liquid phase which is orders of magnitude higher th
an the acceptable value in standard photoemission. Due to the identica
l experimental conditions during the characterization of the solid and
liquid state, a direct comparison of photoelectron spectra can be mad
e qualitatively as well as quantitatively, This is shown in the two ca
ses of silicon and germanium.