ELECTRON-TRANSPORT PROPERTIES OF AMORPHOUS TI-X(CU0.70AL0.30)(1-X) AND TI-X(CU0.15AL0.85)(1-X) QUENCH CONDENSED THIN-FILMS

Authors
RATHNAYAKA KDD HENNINGS BD NAUGLE DG
Citation
Kdd. Rathnayaka et al., ELECTRON-TRANSPORT PROPERTIES OF AMORPHOUS TI-X(CU0.70AL0.30)(1-X) AND TI-X(CU0.15AL0.85)(1-X) QUENCH CONDENSED THIN-FILMS, Journal of non-crystalline solids, 207, 1996, pp. 665-668
Citations number
8
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
207
Year of publication
1996
Part
2
Pages
665 - 668
Database
ISI
SICI code
0022-3093(1996)207:<665:EPOATA>2.0.ZU;2-#
Abstract
The electrical resistivity rho, temperature coefficient of resistance TCR and the Hall coefficient R(H) of amorphous Ti-Cu-Al thin film allo ys prepared by co-condensation in UHV onto liquid nitrogen cooled subs trates are reported as a function of Ti concentration for two differen t ratios of the simple metal components: Ti-x(Cu0.70Al0.30)(1-x) with 0.22 < x < 0.66 and Ti-x(Cu0.15Al0.85)(1-x) with 0.15 < x < 0.55. R(H) is positive and usually larger for more Al rich alloys, TCR is negati ve, and rho is comparable to the corresponding TixAl1-x films.