LOW-TEMPERATURE AMORPHIZATION AT INTERFACES IN LAYERED STRUCTURES - EVIDENCE FOR A LOW-DIMENSIONAL PEIERLS SYSTEM

Citation
Hg. Boyen et al., LOW-TEMPERATURE AMORPHIZATION AT INTERFACES IN LAYERED STRUCTURES - EVIDENCE FOR A LOW-DIMENSIONAL PEIERLS SYSTEM, Journal of non-crystalline solids, 207, 1996, pp. 776-780
Citations number
22
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
207
Year of publication
1996
Part
2
Pages
776 - 780
Database
ISI
SICI code
0022-3093(1996)207:<776:LAAIIL>2.0.ZU;2-0
Abstract
Interface reactions were observed by means of photoelectron spectrosco py during the preparation of Au/Sn bilayers at 77 K. These reactions l ead to ultra-thin (0.5-2 nm) amorphous layers with tunable stoichiomet ry, spanning the same range of compositions as found for the correspon ding vapor-quenched amorphous Hume-Rothery alloys. in all cases, struc ture-induced minima in the electronic density of states at the Fermi l evel are observed for the intermixed amorphous phases. Since structure -induced minima are a characteristic feature of a Peierls system, the ultra-thin amorphous layers may be discussed as reflecting the transit ion from a nearly two-dimensional to an isotropic three-dimensional Pe ierls-distorted system.