MECHANISMS OF IMPLANT DAMAGE ANNEALING AND TRANSIENT ENHANCED DIFFUSION IN SI

Interactions between self-interstitials (I) and {113} interstitial def ects during annealing of Si implant damage have been studied. At low d amage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenche d by nucleation of {113} defects. We show that the transient enhanced diffusion seen in most previous studies arises from the subsequent dis solution of the {113} defects. (C) 1994 American Institute of Physics.