0.2-MU-M ALSB INAS HEMTS WITH 5V GATE BREAKDOWN VOLTAGE/

Authors
BOOS JB KRUPPA W PARK D SHANABROOK BV BENNETT BR
Citation
Jb. Boos et al., 0.2-MU-M ALSB INAS HEMTS WITH 5V GATE BREAKDOWN VOLTAGE/, Electronics Letters, 30(23), 1994, pp. 1983-1984
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
23
Year of publication
1994
Pages
1983 - 1984
Database
ISI
SICI code
0013-5194(1994)30:23<1983:0AIHW5>2.0.ZU;2-B
Abstract
DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.2 mum are reported. The reverse gate characteristics exhibit relati vely low gate leakage current and gate-drain breakdown voltages as hig h as 5V. Equivalent circuit modelling yields an f(T) of 110GHz after r emoval of the gate bonding pad capacitance. The bias dependence of f(m ax) is examined indicating a significant reduction in the unilateral g ain due to impact ionisation.