INTERFACE QUALITY OF SIGE OXIDE PREPARED BY RF PLASMA ANODIZATION

Authors
GOH IS HALL S ECCLESTON W ZHANG JF WERNER K
Citation
Is. Goh et al., INTERFACE QUALITY OF SIGE OXIDE PREPARED BY RF PLASMA ANODIZATION, Electronics Letters, 30(23), 1994, pp. 1988-1989
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
23
Year of publication
1994
Pages
1988 - 1989
Database
ISI
SICI code
0013-5194(1994)30:23<1988:IQOSOP>2.0.ZU;2-Y
Abstract
The latest progress in RF plasma anodisation of SiGe alloys at 80-degr ees-C is reported. Compared with the authors' previous results, consid erable improvement in interfacial quality has been achieved. However, unlike the thermally grown samples, no negative fixed oxide charges we re found.