LOW-VOLTAGE CHARACTERISTICS OF INGAAS INP COMPOSITE CHANNEL HEMT STRUCTURE FABRICATED BY OPTICAL LITHOGRAPHY/

Authors
STRAHLE S HENLE B KOHN F
Citation
S. Strahle et al., LOW-VOLTAGE CHARACTERISTICS OF INGAAS INP COMPOSITE CHANNEL HEMT STRUCTURE FABRICATED BY OPTICAL LITHOGRAPHY/, Electronics Letters, 30(23), 1994, pp. 1989-1991
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
23
Year of publication
1994
Pages
1989 - 1991
Database
ISI
SICI code
0013-5194(1994)30:23<1989:LCOIIC>2.0.ZU;2-#
Abstract
A 0.65 mum gate length composite channel InP-HEMT for low bias use in mobile communication is discussed. At V(D) = 1.6V a record f(max)/f(T) = 2.6 in combination with f(T)L(g) = 39GHz mum or 2.45 x 10(7) cm/s, which is essentially above the collision dominated value, is obtained. The f(T) is already higher than 40GHz (f(T)L(g) = 26GHz mum) at V(D) = 0.75V with an associated f(max)/f(T) = 1.6.