SEPARATION OF IRRADIATION-INDUCED GATE OXIDE CHARGE AND INTERFACE D-TRAPS EFFECTS IN POWER VD-MOSFETS

Authors
STOJADINOVIC N DJORIC S GOLUBOVIC S DAVIDOVIC V
Citation
N. Stojadinovic et al., SEPARATION OF IRRADIATION-INDUCED GATE OXIDE CHARGE AND INTERFACE D-TRAPS EFFECTS IN POWER VD-MOSFETS, Electronics Letters, 30(23), 1994, pp. 1992-1993
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
23
Year of publication
1994
Pages
1992 - 1993
Database
ISI
SICI code
0013-5194(1994)30:23<1992:SOIGOC>2.0.ZU;2-3
Abstract
Irradiation induced degradation mechanisms in power VDMOSFETs are anal ysed using the subthreshold-midgap and single-transistor mobility meth ods. It is shown that the irradiation induced degradation of power VDM OSFETs is due to a significant increase of the gate oxide charge and s omewhat smaller increase of the interface traps.