COMPOSITION-DEPENDENT ENERGY-SPECTRUM OF ELECTRONS IN HG1-XFEXSE SOLID-SOLUTION

The composition dependence of the electron energy spectrum in the Hg1- xFexSe solid solution is investigated assuming the invariability of th e position of the Fe d resonant level in the absolute energy scale. In the linear-in-x approximation, the individual shifts of the extrema o f the re and rs bands are determined from analysis of the x-dependent concentration of the conduction electrons n as dE(Gamma 6)/dx = 2.10 /- 0.05 eV and dE(Gamma 8)/dx = -2.45 +/- 0.05 eV. It is shown that a quantitative description of the experimentally observed n(x) and mu(x) dependences (where mu is the mobility of the conduction electrons) is achieved when taking into account changes of only two parameters of t he theory corresponding to the positions of the extrema of Gamma(6) an d Gamma(8) bands. The energy of the conduction-band bottom is found to vary in a wide range (similar to 100-330 meV) with respect to the iro n-level. This explains, in particular, the absence of saturation of th e contribution from scattering by ionized donors to mu(x), calculated in terms of the short-range correlation model. The transition from the semimetal to the semiconductor; state is found to be at x approximate to 0.06.