CROSSOVER FROM SINGLE-LEVEL TO MULTILEVEL TRANSPORT IN ARTIFICIAL ATOMS

Citation
Eb. Foxman et al., CROSSOVER FROM SINGLE-LEVEL TO MULTILEVEL TRANSPORT IN ARTIFICIAL ATOMS, Physical review. B, Condensed matter, 50(19), 1994, pp. 14193-14199
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
50
Issue
19
Year of publication
1994
Pages
14193 - 14199
Database
ISI
SICI code
0163-1829(1994)50:19<14193:CFSTMT>2.0.ZU;2-B
Abstract
Measurements are reported of the temperature dependence of the conduct ance through a small region of electron gas separated from its leads b y tunnel junctions. The quantization of charge and energy in the small region gives rise to sharp, nearly periodic peaks in the conductance as a function of electron density, one for each electron added to the isolated region. Because the charge and energy are quantized, we call this an artificial atom. At low temperature, the conductance is limite d by resonant tunneling through a single quantum level of the artifici al atom,; but at high temperatures several levels participate. Changes in the temperature dependence of the width and height of conductance peaks display clear evidence for this crossover from single-level to m ultilevel transport.