SCANNING-TUNNELING-MICROSCOPY IMAGES OF GE ADSORBED ON AN AS-COVERED SI(001) SURFACE

Authors
YU BD IDE T OSHIYAMA A
Citation
Bd. Yu et al., SCANNING-TUNNELING-MICROSCOPY IMAGES OF GE ADSORBED ON AN AS-COVERED SI(001) SURFACE, Physical review. B, Condensed matter, 50(19), 1994, pp. 14631-14634
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
50
Issue
19
Year of publication
1994
Pages
14631 - 14634
Database
ISI
SICI code
0163-1829(1994)50:19<14631:SIOGAO>2.0.ZU;2-Y
Abstract
We present scanning-tunneling-microscopy images that support the singl e-dimer exchange mechanism proposed for surfactant-mediated epitaxial growth of Ge on the Si(001) surface [Phys. Rev. Lett. 72, 3190 (1994)] . Unusual features of the calculated images corresponding to the (meta )stable geometries during the exchange process are bright spots betwee n the dimer rows and their variation depending on the bias voltage. Th e experimental image also shows the bright spots between the dimer row s.