DIRECT MAPPING OF THE COSI2 SI(111) INTERFACE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND MODULATION SPECTROSCOPY/

Authors
LEE EY SIRRINGHAUS H VONKANEL H
Citation
Ey. Lee et al., DIRECT MAPPING OF THE COSI2 SI(111) INTERFACE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND MODULATION SPECTROSCOPY/, Physical review. B, Condensed matter, 50(19), 1994, pp. 14714-14717
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
50
Issue
19
Year of publication
1994
Pages
14714 - 14717
Database
ISI
SICI code
0163-1829(1994)50:19<14714:DMOTCS>2.0.ZU;2-N
Abstract
To map the interfacial structure of CoSi2/Si(111), the atomic thicknes s variations of epitaxial CoSi2 films were spatially resolved and dete rmined using ballistic-electron-emission microscopy. Modulation spectr oscopy was also used, and it showed not only thickness variations, but also strong lateral variations near the interfacial steps and disloca tions. Also, a strong energy dependence of the quantum-size effects du e to the transition from bound quantized subbands to resonances in CoS i2 was seen.