TENSILE-STRAINED ALGAASP- AND INGAASP-(ALGA)0.5IN0.5P QUANTUM-WELL LASER-DIODES FOR TM-MODE EMISSION IN THE WAVELENGTH RANGE 650-LESS-THAN-LAMBDA-LESS-THAN-850-NM

TM-polarized laser emission is demonstrated at wavelengths longer than 650 nm, for (AlGa)0.5In0.5P-based laser diodes. These structures cont ain tensile-strained AlGaAsP or InGaAsP quantum well active regions, w hich are capable of spanning a wavelength range of roughly 650-850 nm, for TM-mode lasers on GaAs substrates. This represents an extension o f the wavelength range available from typical GaInP-(AlGa)0.5In0.5P la sers, where the requirement for biaxial tension limits the TM-mode wav elengths to less than 650 nm. In addition, compared to AlGaAs confinin g structures, the high-bandgap (AlGa)0.5In0.5P confinement structure u sed here makes AlGaAs(P) active regions feasible at shorter wavelength s, with good performance maintained for 670< lambda <700 nm. Likewise, the wavelength range 700< lambda <750 nm, where AlGaAs laser characte ristics are diminished, becomes accessible using these materials.