ON THE MODULATION BANDWIDTH OF SEMICONDUCTOR MICROCAVITY LASERS

Authors
KARLSSON A SCHATZ R BJORK G
Citation
A. Karlsson et al., ON THE MODULATION BANDWIDTH OF SEMICONDUCTOR MICROCAVITY LASERS, IEEE photonics technology letters, 6(11), 1994, pp. 1312-1314
Citations number
15
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
11
Year of publication
1994
Pages
1312 - 1314
Database
ISI
SICI code
1041-1135(1994)6:11<1312:OTMBOS>2.0.ZU;2-M
Abstract
The small signal infection current modulation bandwidth of vertical ca vity microlasers in the conventional macroscopic regime and in the mic roscopic regime of ''controlled spontaneous emission'' is investigated . A microlaser, under constraint of nonlinear gain or current density limitations, is found to have the same intrinsic modulation bandwidth as conventional edge-emitting lasers with the same cavity losses and p hoton density.