SELECTION OF METALORGANIC PRECURSORS FOR MOCVD OF METALLURGICAL COATINGS - APPLICATION TO CR-BASED COATINGS

Citation
F. Maury et al., SELECTION OF METALORGANIC PRECURSORS FOR MOCVD OF METALLURGICAL COATINGS - APPLICATION TO CR-BASED COATINGS, Surface & coatings technology, 87-8(1-3), 1996, pp. 316-324
Citations number
49
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
87-8
Issue
1-3
Year of publication
1996
Part
1
Pages
316 - 324
Database
ISI
SICI code
0257-8972(1996)87-8:1-3<316:SOMPFM>2.0.ZU;2-2
Abstract
Metalorganic chemical vapor deposition (MOCVD) is expanding for low te mperature deposition of metallurgical coatings. The abundance of metal organic compounds that can be supplied by chemists makes the design an d the selection of suitably tailored metalorganic precursor a fundamen tal key to develop successfully an MOCVD process for the production of a desired thin film material. The stringent requirements for metalorg anic precursors for deposition of metallurgical coatings are criticall y reviewed in this paper and discussed using typical examples on the g rowth of Cr-based coatings. Particular emphasis is given to the contro l of the metalloid incorporation in the coatings and on the employment of single-source precursors instead of separate precursors for MOCVD of multi-element material.