FULLY PASSIVATED AR COATED INP INGAAS MSM PHOTODETECTORS/

Authors
KOLLAKOWSKI S SCHADE U BOTTCHER EH BIMBERG D
Citation
S. Kollakowski et al., FULLY PASSIVATED AR COATED INP INGAAS MSM PHOTODETECTORS/, IEEE photonics technology letters, 6(11), 1994, pp. 1324-1326
Citations number
12
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
11
Year of publication
1994
Pages
1324 - 1326
Database
ISI
SICI code
1041-1135(1994)6:11<1324:FPACII>2.0.ZU;2-9
Abstract
We report on a technique for antireflection (AR) coating and surface p assivation of InP:Fe/InGaAs:Fe metal-semiconductor-metal (MSM) photode tectors using nonreactive radio frequency (RF) magnetron sputtered sil icon nitride. Excessive leakage currents and photocurrent gain, major performance-limiting factors of unpassivated detectors, were strongly suppressed in this way. The influence of various chemical pretreatment s including sulfide passivation applied to the InP:Fe surface prior to the low-temperature silicon nitride deposition in optimizing the pass ivating process is investigated.