HIGH-RESOLUTION IMAGING OF ELECTRONIC DEVICES VIA X-RAY-DIFFRACTION TOPOGRAPHY

Authors
BEARD WT GREEN KA ZHANG XJ ARMSTRONG RW
Citation
Wt. Beard et al., HIGH-RESOLUTION IMAGING OF ELECTRONIC DEVICES VIA X-RAY-DIFFRACTION TOPOGRAPHY, Applied physics letters, 69(4), 1996, pp. 488-490
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
4
Year of publication
1996
Pages
488 - 490
Database
ISI
SICI code
0003-6951(1996)69:4<488:HIOEDV>2.0.ZU;2-I
Abstract
Measurements are reported for x-ray diffraction topography (XRDT) imag es of implantation and superstructure details in an integrated circuit device investigated with the reflection method of line modified-asymm etric crystal topography (LM-ACT). The x-ray penetration depth and the micron grain size of thin-film nuclear emulsions used to record the d iffraction images are shown to limit spatial resolution in the x-ray t opographs. (C) 1996 American Institute of Physics.