PASSIVATION OF SI(111)-7X7 BY A C-60 MONOLAYER

Citation
Aw. Dunn et al., PASSIVATION OF SI(111)-7X7 BY A C-60 MONOLAYER, Applied physics letters, 69(4), 1996, pp. 506-508
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
4
Year of publication
1996
Pages
506 - 508
Database
ISI
SICI code
0003-6951(1996)69:4<506:POSBAC>2.0.ZU;2-8
Abstract
C-60 monolayers are formed on a Si(111)-7X7 surface under ultrahigh va cuum (UHV) conditions. The effects of exposure to atmosphere (for 30 m in) and water (for 30 s) are assessed by comparing images of the surfa ce acquired using an UHV scanning tunneling microscope. Following expo sure and/or immersion we are able to resolve the C-60 molecules exhibi ting hexagonal order in an arrangement which is essentially identical to that formed prior to withdrawal from the UHV system. Our results cl early show that deposition of one monolayer of C-60 on a Si surface ca n inhibit chemical attack by water and atmospheric oxygen. (C) 1996 Am erican Institute of Physics.