RAMAN-SCATTERING OF ALTERNATING NANOCRYSTALLINE SILICON AMORPHOUS SILICON MULTILAYERS/

Nanocrystallite size distribution and structural properties in alterna ting hydrogenated nanocrystalline silicon/amorphous silicon multilayer s were investigated by means of Raman scattering, The obtained Raman s pectra show a broad peak at similar to 480 cm(-1) from amorphous Si an d some small peaks superposed on the broad peak. According to the posi tions of the crystallite peak, the mean crystallite size and volume fr action of the crystalline were calculated, Since these small peaks hav e strong size dependence of their relative intensities, an effect indu ced by the atomic vibrations from the near-surface region of nanocryst als is considered to be responsible for the modification of the vibrat ional properties and the stable photoluminescence from our samples. (C ) 1996 American Institute of Physics.