COMPUTER MODELING OF CARRIER TRANSPORT IN PBSNSE PHOTODIODES

A numerical technique has been used to solve the carrier transport equ ations for n(+)-p Pb0.935Sn0.065Se photodiode configuration. The model computes the spatial distribution of the electric field, electron and hole concentrations and the generation-recombination mechanisms. Also the effect of doping profiles on the photodiode parameters (R(0)A pro duct, quantum efficiency) is analysed. Results of calculations indicat e the potential possibilities of constructing higher quality PbSnSe ph otodiodes. The R(0)A product of experimentally measured PbSnSe photodi odes is controlled by Shockley-Read generation-recombination mechanism s.