THE ROLE OF GEOMETRIC PARAMETERS IN LASER-INDUCED VAPOR-DEPOSITION OFAMORPHOUS HYDROGENATED SILICON BY A CONTINUOUS-WAVE CARBON-DIOXIDE LASER

The rate of laser-induced deposition of amorphous silicon by continuou s-wave CO2 laser radiation was studied as a function of geometric para meters such as beam-substrate distance and beam diameter. It was found that the deposition rate increases abruptly with increasing (1) beam- substrate distance, and (2) beam diameter, The optimal values of beam cross section and beam-substrate distance, providing the highest depos ition rate, were shown to exist under the experimental conditions empl oyed.