M. Bartsch et al., EXTENDED DISLOCATIONS AND DISLOCATION DIPOLES IN PLASTICALLY DEFORMEDSIC SINGLE-CRYSTALS, Physica status solidi. a, Applied research, 146(1), 1994, pp. 173-184
SiC single crystal plates are deformed in bending at 1700 and 1750-deg
rees-C in air. Smoothly curved extended dislocations of total (a/3) [1
12BAR0] Burgers vectors are formed, many of which are arranged in grou
ps of parallel dislocations on basal planes. The slip planes of differ
ent groups have mostly distances smaller than 100 nm. The stacking fau
lt energy of about 1.7 mJ/m2 is estimated from the width of the dissoc
iated dislocations. Frequently, dipoles of extended dislocations havin
g much lower width form, which agrees with calculations of their equil
ibrium configurations. The shape of dislocations crossing each other o
n parallel planes depends on the sequence of the partial dislocations
and can be understood by the mutual elastic interactions of the latter
. It is argued that long-range elastic dislocation interactions essent
ially contribute to the flow stress at these high temperatures.