MICROSTRUCTURE, ELECTRICAL-CONDUCTIVITY, AND PIEZOELECTRIC PROPERTIESOF BISMUTH TITANATE

Citation
Hs. Shulman et al., MICROSTRUCTURE, ELECTRICAL-CONDUCTIVITY, AND PIEZOELECTRIC PROPERTIESOF BISMUTH TITANATE, Journal of the American Ceramic Society, 79(12), 1996, pp. 3124-3128
Citations number
22
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00027820
Volume
79
Issue
12
Year of publication
1996
Pages
3124 - 3128
Database
ISI
SICI code
0002-7820(1996)79:12<3124:MEAPP>2.0.ZU;2-A
Abstract
A study was conducted on the effects of microstructure, atmosphere, an d several dopants on the electrical conductivity of bismuth titanate ( Bi4Ti3O12, BIT), Increased grain size increased the conductivity in un doped BIT as did acceptor dopants that substituted for either Bi (Ca a nd Sr) or Ti (Fe), A donor dopant (Nb) decreased the conductivity in B IT by as much as 3 orders of magnitude, The increased resistivity of N b-doped BIT improved the polarization in an electric field, A piezoele ctric coefficient, d(33), of 20.0 pC/N was achieved with a Nb-doped BI T composition corresponding to Bi4Ti2.86Nb0.14O12.