SURFACE FREE-ENERGIES AND MORPHOLOGIES OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS

We have calculated the surface free energies of the chemical vapor dep osited diamond crystals during the preparation process, using the mode l that a fraction of carbon dangling bonds on the growth surface are s aturated by hydrogen. The results show that the surface free energies of the three most energetically favored crystal planes, i.e. (100), (1 10) and (111), can be used to interpret the changes of predominant fac ets in the surface morphology hom {100} to {111} with increasing subst rate temperature. In chemical vapor deposition conditions, it is found that the growth surfaces of diamond are more stable than that of grap hite.