PHYSICAL VAPOR-DEPOSITION OF MOLYBDENUM AND SILICON THIN-FILMS

Citation
S. Govindarajan et al., PHYSICAL VAPOR-DEPOSITION OF MOLYBDENUM AND SILICON THIN-FILMS, Surface & coatings technology, 68, 1994, pp. 45-50
Citations number
16
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
68
Year of publication
1994
Pages
45 - 50
Database
ISI
SICI code
0257-8972(1994)68:<45:PVOMAS>2.0.ZU;2-P
Abstract
Molybdenum disilicide has emerged as one of the leading intermetallics for use at elevated temperatures. With the objective of developing an oxidation resistant coating system for high temperature applications (up to 1600 degrees C), using the concepts of functionally graded mate rials (FGMs) and combustion synthesis, a research program has been und ertaken to synthesize FGMs of molybdenum disilicide composites. This p aper focuses on the preliminary research carried out on characterizing the structure-property-processing relationships during the sputter de position of thin films of molybdenum and silicon. The thin films were deposited onto glass/stainless steel substrates using d.c. magnetron s puttering for molybdenum and r.f. magnetron sputtering for silicon. Th e processing variables investigated include the cathode power, substra te bias and the chamber pressure. The sputtering rates were determined for both molybdenum and silicon, and found to vary linearly with the cathode power. Details of X-ray diffraction analysis and scanning elec tron microscopy of the sputtered films are presented.