ION-BEAM-ASSISTED SPUTTER-DEPOSITION OF THIN OXIDE-FILMS

Experimental results of sputter deposition of thin oxide films of tita nium and aluminium are presented and the effects of simultaneous irrad iation of thin films by an oxygen ion beam during growth are discussed . The films are deposited on various substrates such as Ti, Si, SUS an d quartz using an argon ion beam for sputtering and an oxygen ion beam for producing the mixing effect and control of the stoichiometry of t he oxides. The deposition rate was about 0.07 nm s(-1) and the oxygen beam currents were a few tens of microamperes per square centimetre. S table oxide films are produced. Measurement results related to the mic romorphology of the interface, film composition and adhesion are prese nted. Experimental results suggest that the ion mixing effect in the p rocess of ion-beam-assisted sputter deposition strongly influences the adhesion and stoichiometry of the films.