PLASMA-ACTIVATED HIGH-RATE EVAPORATION USING A LOW-VOLTAGE ELECTRON-BEAM SYSTEM

Citation
S. Schiller et al., PLASMA-ACTIVATED HIGH-RATE EVAPORATION USING A LOW-VOLTAGE ELECTRON-BEAM SYSTEM, Surface & coatings technology, 68, 1994, pp. 788-793
Citations number
14
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
68
Year of publication
1994
Pages
788 - 793
Database
ISI
SICI code
0257-8972(1994)68:<788:PHEUAL>2.0.ZU;2-Z
Abstract
Aluminium-oxide-coated plastic films have attained increasing economic importance. Decisive for their general use is the cost of coating. A major price determinant is the deposition rate. With reactive high rat e evaporation of aluminium and aluminium oxide, commercial feasibility is attainable. High deposition rates of the order of 100 nm s(-1) or more do not yet, however, meet the targeted property requirements. It will be pointed out that progress can be attained by use of the plasma activation process. The present level of development will be illustra ted. Finally, the direction and orientation for future research will b e shown.