ORIGIN OF DEPOLARIZATION IN SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O-3 THIN-FILM CAPACITORS

Citation
T. Mihara et al., ORIGIN OF DEPOLARIZATION IN SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O-3 THIN-FILM CAPACITORS, JPN J A P 2, 33(12A), 1994, pp. 120001703-120001706
Citations number
10
Categorie Soggetti
Physics, Applied
Volume
33
Issue
12A
Year of publication
1994
Pages
120001703 - 120001706
Database
ISI
SICI code
Abstract
We evaluated depolarization characteristics of sol-gel Pb(Zr0.4Ti0.6)O -3 ferroelectric thin-film capacitors. The depolarization characterist ics were strongly dependent upon the capacitance of the load capacitor . The newly obtained hysteresis loop during the pulse response indicat es that significant voltage of opposite direction is generated on the ferroelectric capacitor at the moment the read pulse becomes zero. We experimentally found that the mechanism of depolarization is based on depoling (or partial switching) by an opposite-direction voltage arisi ng from accumulated switching charge on a load capacitor. This mechani sm can be easily extended to the internal depolarization effect due to the interfacial linear capacitor between the ferroelectric region and electrode.