Rr. Chandlerhenderson et al., THE IMPACT OF SONICATION ON THE STRUCTURE AND PROPERTIES OF STAIN-ETCH POROUS SILICON, Journal of the Electrochemical Society, 141(12), 1994, pp. 120000166-120000168
The influence of sonication on the surface structure and chemical stab
ility of porous silicon (PS) thin films prepared by an open-circuit st
ain-etch is described. An analysis of differences in surface morpholog
ies by atomic force microscopy between samples prepared either in the
presence or absence of sonication reveals that sonication generates a
relatively rougher, thicker film as evidenced by the magnitudes of ave
rage and root-mean square surface roughness (R(a))and the maximum heig
ht of surface features. These differences result in stain-etch porous
Si films possessing greater chemical stability to exposure to reagents
such as water and organoamines.