HIGH SELECTIVITY MAGNETICALLY ENHANCED REACTIVE ION ETCHING OF BORON-NITRIDE FILMS

Oxygen and tetrafluorocarbon magnetically enhanced reactive ion etchin g (MERIE) of plasma chemical vapor deposited (CVD) boron nitride (BN) and silicon boron nitride (SiBN) was studied for both blanket and subm icron patterned films. The relative etch selectivities of the BN and S iBN to oxide (SiO2) and nitride (SiN) were determined. In general, oxy gen-rich O-2/CF4 MERIE produce very high etch selectivity results whil e maintaining vertical etch profiles. This etch process expands the po tential for use of BN/SiBN in fabrication of subhalf micron devices.