UNIFORMITY OF THE N2O FURNACE OXYNITRIDE PROCESS FOR THE FORMATION OFTHIN TUNNEL DIELECTRICS

We show that the properties of N2O oxynitride grown in a conventional horizontal furnace may vary down the tube. This could be a control iss ue when this material is used as the tunnel dielectric for electricall y erasible programmable read-only memories (EEPROMs). We studied the e ffect of important process parameters on the electrical properties of N2O furnace oxynitrides. It was found that oxynitride grown at a high flow rate does not suffer a variation down the tube and provides low e lectron trapping and robust Si/SiO2 interface.