EFFECTS OF LOW-DOSE SILICON, CARBON, AND OXYGEN IMPLANTATION DAMAGE ON DIFFUSION OF PHOSPHORUS IN SILICON

As device dimensions shrink to submicron levels, good design of ultras hallow junctions has become increasingly important. It is in this cont ext that the use of carbon/oxygen as a possible diffusion-suppressing agent for phosphorus has been suggested. To study this complex phenome non, this experimental study looks at the effects of low dose silicon, carbon, and oxygen implantation damage on the diffusion of lightly do ped phosphorus layers. The effects of a silicon and carbon coimplant o n the diffusion of phosphorus are studied as part of a second experime nt. Finally, lightly doped drain structure is annealed in the presence of a carbon implant. Carbon is the most effective diffusion-suppressi ng agent among the three species. Results from the second experiment s uggest that carbon strongly affects the interstitial profile, and ther eby the final phosphorus profile.