FTIR STUDIES OF THE ADSORPTION DESORPTION BEHAVIOR OF CU CHEMICAL-VAPOR-DEPOSITION PRECURSORS ON SILICA .4. INTERACTION OF 5,5-HEXAFLUOROACETYLACETONATO)(2-BUTYNE)COPPER(I), (HFAC)CU(2-BUTYNE) AND ROACETYLACETONATO)(VINYLTRIMETHYLSILANE)COPPER(I), (HFAC)CU(VTMS) WITH PASSIVATED SILICA SURFACES AND COMPARISON TO SELECTIVE CVD OF CU/

Selective chemical vapor deposition (CVD) on metals in the presence of SiO2 can be achieved by passivating the SiO2 surface using reagents w hich replace or shield isolated hydroxyl, hydrogen-bonded hydroxyl, an d SiO four-member rings with less reactive-SiR(3) groups. This process was studied by FTIR of (hfac) CuL (where L = VTMS and 2-butyne) adsor ption/desorption on unpassivated and passivated SiO2 surfaces with var ying surface concentrations of hydroxyl groups and four-member SiO rin gs. The passivating reagents included monofunctional trimethylchlorosi lane (TMSCI), hexamethyldisilazane (HMDS), trimethyldimethylaminosilan e (TMDMA), dimethyl-t-butyldimethylaminosilane (DMBDMA), and bifunctio nal dimethylbis(dimethylamino)silane (DMDMA) species. Effective passiv ation was obtained by the rapid reaction of DMBDMA with hydroxylated S iO2 surfaces even when exposed to water vapor. High-temperature treatm ent of SiO2 before passivation led to less effective passivation becau se a smaller fraction of the SiO2 surface was protected by the passiva ting reagent. Bifunctional passivating reagents were less effective be cause the unreacted functional group on the reagent can react with (hf ac)CuL species. Various other aspects of the interaction of (hfac)CuL species with SiO2 surfaces and the implications of these results for s elective CVD are discussed.