PROBING SEMICONDUCTOR INTERFACES USING NONLINEAR-OPTICAL SPECTROSCOPY

Authors
MCGILP JF CAVANAGH M POWER JR OMAHONY JD
Citation
Jf. Mcgilp et al., PROBING SEMICONDUCTOR INTERFACES USING NONLINEAR-OPTICAL SPECTROSCOPY, Optical engineering, 33(12), 1994, pp. 3895-3900
Citations number
23
Categorie Soggetti
Optics
Journal title
Optical engineering → ACNP
ISSN journal
00913286
Volume
33
Issue
12
Year of publication
1994
Pages
3895 - 3900
Database
ISI
SICI code
0091-3286(1994)33:12<3895:PSIUNS>2.0.ZU;2-D
Abstract
The nonlinear optical response of semiconductor interfaces using three -wave mixing experiments in general, and second harmonic generation (S HG) in particular, has been widely studied, but it is only recently, w ith the advent of commercial tunable pulsed laser sources, that the sp ectroscopic aspect of SHG can be more readily exploited. Results from porous Si and Si(100)-Sb are reported that illustrate the potential of spectroscopic SHG as a probe of semiconductor interfaces.